(Moscow Institute of Physics and Technology) Researchers have managed to grow atomically thin films of molybdenum disulfide spanning up to several tens of square centimeters. Thus, the noticeable remnant polarization value and a good switching endurance were obtained directly in contact with MoS2 film, allowing to conclude the possibility of the memory MoS2-based FeFET concept realization.

Original source: https://www.eurekalert.org/pub_releases/2020-01/miop-poa012220.php