(Tokyo Institute of Technology) Scientists at Tokyo Institute of Technology explore a new material combination that sets the stage for magnetic random access memories, which rely on spin — an intrinsic property of electrons — and could outperform current storage devices. Their breakthrough published in a new study describes a novel strategy to exploit spin-related phenomena in topological materials, which could spur several advances in the field of spin electronics. Moreover, this study provides additional insight into the underlying mechanism of spin-related phenomena.

Original source: https://www.eurekalert.org/pub_releases/2019-12/tiot-ptw122519.php